Method for programming a memory system

ABSTRACT

A memory system includes a plurality of memory cells, and the memory cells are multiple-level cells. The memory system performs program operations to program the memory cells. After each program operation, at least one threshold voltage test is performed to determine if threshold voltages of the memory cells are greater than the verification voltage. When the threshold voltage of a first memory cell is determined to be greater than a first verification voltage, the first memory cell will be inhibited from being programmed during the next program operation. When the threshold voltage of a second memory cell is determined to newly become greater than a second verification voltage, where the second verification voltage is greater than the first verification voltage, the second memory cell will be programmed again during the next program operation.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.16/371,130, filed on Apr. 1, 2019, which is a continuation ofInternational Application No. PCT/CN2019/075549, filed on Feb. 20, 2019,both of which are incorporated herein by reference in their entireties.

BACKGROUND

The present disclosure is related to a method for programming a memorysystem, and more particularly, to a method for programming a memorysystem to reduce the retention error.

NAND flash memory is a type of non-volatile storage medium that has beenwidely used in many fields including notebook, mobile phones, and harddrive. However, the data stored in NAND flash memory may not always bestable and fixed. For example, as the flash memory cells lose chargesover time, the data stored in the flash memory cells may change andbecome invalid. The retention error would be even more detrimental whenthe flash memory cells are multiple-level cells (MLC).

One of the reasons that causes the retention error is called the instant(or initial) threshold voltage (Vt) shift (IVS), which means that thethreshold voltage raised by the program operation may drop within ashort period of time after the program operation. Sometimes, the IVS canbe as significant as 200 mV to 300 mV. In this case, the read marginwill be reduced, and the data stored in some of the flash memory cellsmay become invalid.

SUMMARY

One embodiment of the present disclosure discloses a method forprogramming a memory system. The memory system includes a plurality ofmemory cells, and the plurality of memory cells are multiple-level cells(MLC).

The method includes performing a plurality of program operations toprogram the plurality of memory cells, after each of the plurality ofprogram operations, performing at least one threshold voltage test todetermine if threshold voltages of the plurality of memory cells aregreater than at least one verification voltage, when a threshold voltageof a first memory cell is determined to be greater than a verificationvoltage corresponding to a programming state lower than a predeterminedprogramming state, inhibiting the first memory cell from beingprogrammed during a next program operation, and when a threshold voltageof a second memory cell is determined to newly become greater than averification voltage corresponding to a programming state no lower thana predetermined programming state, keeping programming the second memorycell during a next program operation.

Another embodiment of the present disclosure discloses a method forprogramming a memory system. The memory system includes a plurality ofmemory cells, and the plurality of memory cells are multiple-level cells(MLC).

The method includes performing a plurality of program operations toprogram the plurality of memory cells, after each of the plurality ofprogram operations, performing at least one threshold voltage test todetermine if threshold voltages of the plurality of memory cells aregreater than at least one verification voltage, when a threshold voltageof a first memory cell is determined to be greater than a firstverification voltage, inhibiting the first memory cell from beingprogrammed during a next program operation, and after a predeterminednumber of program operations have been performed, increasingverification voltages to be tested in following threshold voltage tests.

Another embodiment of the present disclosure discloses a method forprogramming a memory system. The memory system includes a plurality ofmemory cells, and the plurality of memory cells are multiple-level cells(MLC).

The method includes performing a plurality of program operations toprogram the plurality of memory cells, after each of the plurality ofprogram operations, performing at least one threshold voltage test todetermine if threshold voltages of the plurality of memory cells aregreater than at least one verification voltage, when a threshold voltageof a first memory cell is determined to be greater than a firstverification voltage, inhibiting the first memory cell from beingprogrammed during a next program operation, and after a thresholdvoltage test corresponding to a target programming state of theplurality of memory cells is performed, increasing verification voltagesto be tested in following threshold voltage tests corresponding to allprogramming states of the plurality of memory cells.

Another embodiment of the present disclosure discloses a memory system.The memory system includes a plurality of memory cells coupled to atleast one word line, and a control circuit coupled to the at least oneword line. The plurality of memory cells are multiple-level cells (MLC).

The control circuit performs a plurality of program operations toprogram the plurality of memory cells by providing program voltagesthrough the at least one word line, performs at least one thresholdvoltage test to determine if threshold voltages of the plurality ofmemory cells are greater than at least one verification voltage aftereach of the plurality of program operations. The control circuitinhibits a first memory cell from being programmed during a next programoperation when a threshold voltage of the first memory cell isdetermined to be greater than a verification voltage corresponding to aprogramming state lower than a predetermined programming state. Thecontrol circuit keeps programming a second memory cell during a nextprogram operation when a threshold voltage of the second memory cell isdetermined to newly become greater than a verification voltagecorresponding to a programming state no lower than a predeterminedprogramming state.

These and other objectives of the present disclosure will no doubtbecome obvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a memory system according to one embodiment of the presentdisclosure.

FIG. 2 shows a method for operating the memory system in FIG. 1according to one embodiment of the present disclosure.

FIG. 3 shows a method for operating the memory system in FIG. 1according to another embodiment of the present disclosure.

DETAILED DESCRIPTION

FIG. 1 shows a memory system 100 according to one embodiment of thepresent disclosure. The memory system 100 includes a plurality of memorycells MCA(1,1) to MCA(M,N) and a control circuit 110, where M and N arepositive integers. In some embodiments of the present disclosure, thememory system 100 can be a flash memory, such as a NAND type flashmemory.

In FIG. 1, N memory cells can be coupled to the same corresponding wordline. For example, the memory cells MCA(1,1) to MCA(N) can be coupled tothe word line WL1, and the memory cells MCA(M,1) to MCA(M,N) can becoupled to the word line WLM. Also, the control circuit 110 is coupledto the word lines WL1 to WLM for controlling the memory cells MCA(M,1)to MCA(M,N) for programming operations.

In some embodiments, memory cells coupled to the same word line can beprogrammed at the same time by applying the program voltage through theword line.

In some embodiments, the memory cells MCA(1,1) to MCA(M,N) can bemultiple-level cells (MLC), including quad-level cells (QLC) andtriple-level cells (TLC). That is, each of the memory cells MCA(1,1) toMCA(M,N) can store data of multiple bit states.

For example, each of the memory cells MCA(1,1) to MCA(M,N) can include afloating gate transistor FT. During a program operation of the memorycells MCA(1,1) to MCA(M,N), the gate terminals of the floating gatetransistors FT of the memory cells MCA(1,1) to MCA(M,N) can receive aprogram voltage from the word lines WL1 to WLM, and the first terminalsof the floating gate transistors FT of the memory cell MCA(1,1) toMCA(M,N) can receive a reference voltage. In some embodiments, theprogram voltage can be greater than the reference voltage, and thus thehigh cross voltage between the gate terminals and the first terminals ofthe floating gate transistors FT will inject electrons to the gatestructures of the floating gate transistors FT, increasing the thresholdvoltage of the floating gate transistors FT.

By injecting sufficient electrons to the gate structures of the floatinggate transistors FT, the threshold voltages of the floating gatetransistors FT will be raised to the desired levels. Consequently, thestate of data stored in the memory cells MCA(1,1) to MCA(M,N) can beidentified according to the levels of the threshold voltages of thefloating gate transistors FT of the memory cells MCA(1,1) to MCA(M,N).

For example, the memory cells MCA(1,1) to MCA(M,N) may be able to storeeight different states of data. In this case, if the threshold voltageof the memory cell MCA(1,1) is smaller than a first verificationvoltage, then the memory cell MCA(1,1) may be deemed as not beingprogrammed, and the memory cell MCA(1,1) may be deemed as having a firstprogramming state. However, if the threshold voltage of the memory cellMCA(1,1) is greater than the first verification voltage, then the memorycell MCA(1,1) may be deemed as being programmed to have a secondprogramming state. Also, if the memory cell MCA(1,1) is kept beingprogrammed to have its threshold voltage being greater than a secondverification voltage which is greater than the first verificationvoltage, then the memory cell MCA(1,1) will be deemed as beingprogrammed to have a third programming state, and so on. In some otherembodiments, the memory cells MCA(1,1) to MCA(M,N) may be able to storemore or less states of data, and the states of data may be representedby threshold voltages with different orders according to the applicationneed.

However, after the memory cells MCA(1,1) to MCA(M,N) are programmed tothe desired levels of threshold voltages, the threshold voltages of thememory cells MCA(1,1) to MCA(M,N) may be dropped within a short periodof time, which is the so called instant threshold voltage shift (orinitial threshold voltage shift). The instant threshold voltage shiftmay result in the threshold voltages of some of the memory cellsMCA(1,1) to MCA(M,N) dropping below the verification voltage, therebycausing the data stored in some of the memory cells MCA(1,1) to MCA(M,N)to fault.

To address the issue caused by instant threshold voltage shift,multiple-programming has been proved to be effective. That is, after thememory cell has been programmed to have its threshold voltage becomegreater than the corresponding verification voltage, an additionalprogram operation can be performed to the memory cell to reduce theinstant threshold voltage shift of the memory cell.

FIG. 2 shows a method 200 for operating the memory system 100 accordingto one embodiment of the present disclosure. In some embodiments, themethod 200 can include steps S210 to S280 as shown in FIG. 2, but is notlimited to the order shown in FIG. 2.

S210: perform a program operation to program the memory cells MCA(1,1)to MCA(M,N);

S220: after the program operation, perform at least one thresholdvoltage test to determine if threshold voltages of the memory cellsMCA(1,1) to MCA(M,N) are greater than at least one verification voltage;

S230: if a predetermined number of program operations have beenperformed, go to Step S240, otherwise go to Step S250;

S240: if a threshold voltage of a memory cell is determined to newlybecome greater than a verification voltage corresponding to aprogramming state no lower than a predetermined programming state, go tostep S242, otherwise go to step S250;

S242: keep programming the memory cell during a next program operation;

S250: if a memory cell is determined to be greater than thecorresponding verification voltage, inhibit the memory cell from beingprogrammed during a next program operation;

S260: if there are more than a target number of memory cells that havenot passed the corresponding threshold voltage tests, go to step S270,otherwise go to step S280;

S270: if a maximum number of program operations have been performed, goto step S272, otherwise go to step S210;

S272: determine that the program process has failed.

S280: determine that the program process has succeeded.

In some embodiments, steps S210 to S280 can be performed by the controlcircuit 110. That is the control circuit 110 can provide the desiredprogram voltages according to the programming progress.

In step S210, the program operation can be performed to raise thethreshold voltages of the memory cells MCA(1,1) to MCA(M,N), and everytime after the program operation is performed, at least one thresholdvoltage test can be performed to determine if the threshold voltages ofthe memory cells MCA(1,1) to MCA(M,N) are greater than at least oneverification voltage. For example, a program operation may be performedto program the memory cell MCA(1,1) to have the second programmingstate. In this case, a threshold voltage test corresponding to thesecond programming state will be performed in step S220. Also, the sameprogram operation may also program the memory cell MCA(1,2) to have thethird programming state. In this case, a threshold voltage testcorresponding to the third programming state will also be performed instep S220.

Generally, if the memory cell MCA(1,1) is meant to be programmed to havethe second programming state and the memory cell MCA(1,1) has passed thethreshold voltage test corresponding to the second programming state,then the memory cell MCA(1,1) would be inhibited during the next programoperation as shown in step S250. However, if the memory cell MCA(1,1)has not passed the threshold voltage test corresponding to the secondprogramming state, meaning the threshold voltage of the memory cellMCA(1,1) is still smaller than the corresponding verification voltage,then the memory cell MCA(1,1) will be programmed during the next programoperation to keep raising its threshold voltage.

In FIG. 2, to reduce the instant threshold voltage shift, areprogramming scheme can be applied when a predetermined number ofprogram operations have been performed and a threshold voltage of thememory cell is determined to newly become greater than a verificationvoltage that is not smaller than the predetermined verification voltage.Namely, for memory cells to be programmed to higher programming states,the additional program operation can be applied to further secure thethreshold voltage.

For example, in some embodiments, the predetermined verification voltagecan be corresponding to the sixth programming state. In this case, ifthe memory cell MCA(1,2) is meant to be programmed to the sixthprogramming state and has been determined to newly become greater thanthe verification voltage corresponding to the sixth programming state instep S220, then, instead of being inhibited, the memory cell MCA(1,2)will be programmed again during the next program operation. Therefore,the affection of the instant threshold voltage shift on the memory cellMCA(1,2) can be reduced.

The additional program operations are performed to memory cells meant tobe programmed to higher programming states because the issue of instantthreshold voltage shift can become more significant when the thresholdvoltages of the memory cells become higher. Also, if the additionalprogram operation is added when the memory cells have lower programmingstates, then the memory cells may be over programmed when they areprogrammed to have the higher programming states, which may deterioratethe memory cells and cause instability.

Therefore in step 230, the number of program operations performed willbe checked before applying the additional program operation forpreventing over programming. For example, in some embodiments, beforethe 18^(th) program operation, the memory cells passing the thresholdvoltage tests will always be inhibited during the next program operationas shown in step S250. However, after the 17^(th) program operation, theadditional program operation will be performed to those memory cellsthat are determined to newly become greater than the verificationvoltage corresponding to the higher programming states as shown in stepsS240 and S242.

In this case, if the threshold voltage of the memory cell MCA(1,1) isdetermined to be greater than the verification voltage corresponding tothe first programming state, the memory cell MCA(1,1) will be inhibitedduring the next program operation as shown in step S250. After theprogram operations have been performed more than a predetermined numberof times, for example but not limited to 17 times, if the thresholdvoltage of the memory cell MCA(1,2) is determined to newly becomegreater than the verification voltage corresponding to the sixthprogramming state, the memory cell MCA(1,2) will be programmed againduring the next program operation. However, before the programoperations have not been performed more than 17 times, even if thethreshold voltage of the memory cell MCA(1,3) is determined to newlybecome greater than the verification voltage corresponding to the sixthprogramming state, the memory cell MCA(1,3) will still be inhibitedduring the next program operation.

Furthermore, in some embodiments, by reprogramming the memory cellshaving high programming states may be enough to prevent overprogramming. In this case, step S230 may be omitted, and the additionalprogram operation will be performed to all memory cells that have beendetermined to newly become greater than the verification voltagescorresponding to higher programming states without considering thenumber of program operations that have been performed.

In addition, to improve the efficiency of the program operation, theincremental step pulse programming (ISPP) can be applied to the method200. For example, in method 200, during a first program operation, afirst program pulse may be generated to program the memory cellsMCA(1,1) to MCA(M,N) while during a second program operation after thefirst program operation, a second program pulse may be generated toprogram the memory cells MCA(1,1) to MCA(M,N). In this case, the secondprogram pulse can have a voltage greater than the first program pulse tohelp to increase the threshold voltages of the memory cells MCA(1,1) toMCA(M,N) in the second program operation.

After steps S240, S242 and S250, step S260 can be performed to determineif there are more than a target number of memory cells that have notpassed the corresponding threshold voltage tests. If there are more thanthe target number of memory cells that have not passed the correspondingthreshold voltage tests, it may imply that the memory system 100 has notbeen programmed successfully and may need more times of programoperation. However, if there are less than the target number of memorycells that have not passed the corresponding threshold voltage tests, itmay imply that the memory system 100 has been programmed successfully asconcluded in step S280.

Furthermore, in some embodiments, the total number of the programoperations can be limited to be under a maximum number for preventingover programming and endless operations. Therefore, in step S270, if theprogram operations have been performed for more than the maximum numberof times, then the program process will be determined to have failed instep S272. Otherwise, the next program operation will be performed instep S210.

With method 200, the threshold voltages of the memory cells can besteadily secured, and the retention error caused by instant thresholdvoltage shift can be reduced.

FIG. 3 shows a method 300 for operating the memory system 100 accordingto another embodiment of the present disclosure. In some embodiments,the method 300 can include steps S310 to S380 as shown in FIG. 3, but isnot limited to the order shown in FIG. 3.

S310: perform a program operation to program the memory cells MCA(1,1)to MCA(M,N);

S320: after the program operation, perform at least one thresholdvoltage test to determine if threshold voltages of the memory cellsMCA(1,1) to MCA(M,N) are greater than at least one verification voltage;

S330: if a predetermined number of program operations have beenperformed, go to step S340, otherwise go to step S332;

S332: if a threshold voltage test corresponding to a target programmingstate has been performed, go to step S340, otherwise go to step S350;

S340: increase verification voltages to be tested in following thresholdvoltage tests;

S350: if a memory cell is determined to be greater than thecorresponding verification voltage, inhibit the memory cell from beingprogrammed during a next program operation;

S360: if there are more than a target number of memory cells that havenot passed the corresponding threshold voltage tests, go to step S370,otherwise go to step S380;

S370: if a maximum number of program operations have been performed, goto step S372, otherwise go to step S310;

S372: determine that the program process has failed.

S380: determine that the program process has succeeded.

In some embodiments, steps S310 to S380 can be performed by the controlcircuit 110. That is the control circuit 110 can provide the desiredprogram voltages according to the programming progress.

In method 300, instead of performing additional program operations, theverification voltage can be increased to reduce the retention errorcaused by the instant threshold voltage shift.

For example, after the program operation in step S310 and the thresholdvoltage tests in step S320 are performed, step S330 will determine ifthe predetermined number of program operations have been performed. Ifthe program operations have been performed more than the predeterminednumber of times, for example but not limited to 17 times, then theverification voltages to be tested in following threshold voltage testswill be increased in step S340. That is, to pass the threshold voltagecorresponding to a specific programming state, the threshold voltage ofthe memory cell must be higher than a previous standard level.Consequently, even if the instant threshold voltage shift occurs, thethreshold voltage of the memory cell will still be high enough toacquire the desired programming state during the read operation.

Also, the programming state of the threshold voltage test will bechecked in step S332. In this case, if the threshold voltage testcorresponding to a target programming state, for example but not limitedto the sixth programming state, has been performed, then theverification voltages to be tested in following threshold voltage testswill be increased in step S340. Therefore, memory cells that are meantto be programmed to higher programming states and are more difficult tobe programmed will be tested more strictly during the program process toprevent the instant threshold voltage shift from causing retentionerrors.

One of the reasons for not increasing the verification voltages in thevery beginning of the program process is to protect the memory cellsMCA(1,1) to MCA(M,N) from being over programmed. However, in someembodiments, one of the steps S330 and S332 may be omitted if thecondition of the memory system 100 allows.

In summary, the memory system and the methods for programming the memorysystems provided by the embodiment of the present disclosure can performadditional program operations to memory cells that have newly passed thethreshold voltage tests or can increase the verification voltages in thethreshold voltage tests corresponding to higher programming states.Therefore, the memory cells can be programmed to have threshold voltagesgreater than the verification voltages used in the read operation withsufficient headroom, preventing the retention errors caused by theinstant threshold voltage shift and securing the reading voltage margin.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the disclosure. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. A method for programming a memory system, thememory system comprising a plurality of memory cells, the methodcomprising: performing a plurality of program operations to program theplurality of memory cells; after each of the plurality of programoperations, performing at least one threshold voltage test to determineif threshold voltages of the plurality of memory cells are greater thanat least one verification voltage; when a threshold voltage of a firstmemory cell is determined to be greater than a verification voltagecorresponding to a programming state lower than a predeterminedprogramming state, inhibiting the first memory cell from beingprogrammed during a next program operation; and when a threshold voltageof a second memory cell is determined to newly become greater than averification voltage corresponding to a programming state no lower thana predetermined programming state, keeping programming the second memorycell during a next program operation; wherein the plurality of memorycells are multiple-level cells (MLC).